Development of semi-conductive carbon nanotubes (CNTs) thin-film transistors into biosensors. by Zhong, Kang Tai.

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Electrical characterization of the novel vertical slit field-effect transistor (VeSFET) by Tung, Zhi Yan.

“…A junctionless Vertical Slit Field-Effect Transistor (VeSFET) fabricated on SOI wafer using conventional CMOS process was proposed by W. …”
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Single-layered molybdenum disulfide based field effect transistor for bacteria detection. by Liu, Yuxin.

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Comparison of tube versus transistor audio amplifier using engineering and qualitative metrics by Lee, Jun Yu

“…The project is to design and build a Vacuum Tube and a Transistor audio amplifier. Old vs new technology to determine why audiophiles still prefer the sound of the Vacuum Tube amplifiers.…”
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Datta-and-Das spin transistor controlled by a high-frequency electromagnetic field by Sheremet, A. S., Kibis, O. V., Kavokin, A. V., Shelykh, I. A.

“…We developed the theory of spin dependent transport through a spin-modulator device (so-called Datta-and-Das spin transistor) in the presence of a high-frequency electromagnetic field (dressing field). …”
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Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor by Singh, Pushpapraj, Park, Woo-Tae, Miao, Jianmin, Shao, Lichun, Kotlanka, Rama Krishna, Kwong, Dim Lee

“…The piezoresistance and noise of n-type gate-all-around nanowire field-effect-transistor (NWFET) is investigated as a function of gate bias. …”
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A physical design tool for carbon nanotube field-effect transistor circuits by Rubin, Steven M., Huang, Jiale, Zhu, Minhao, Yang, Shengqi, Gupta, Pallav, Zhang, Wei, Garretón, Gilda, He, Jin

“…In this article, we present a graphical Computer-Aided Design (CAD) environment for the design, analysis, and layout of Carbon NanoTube (CNT) Field-Effect Transistor (CNFET) circuits. This work is motivated by the fact that such a tool currently does not exist in the public domain for researchers. …”
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One dimensional transport in silicon nanowire junction-less field effect transistors by Mirza, M, Schupp, F, Mol, J, MacLaren, D, Briggs, G, Paul, D

“…Junction-less nanowire transistors are being investigated to solve short channel effects in future CMOS technology. …”

Hybrid organic–metal oxide multilayer channel transistors with high operational stability by Lin, Y, Li, W, Faber, H, Seitkhan, A, Hastas, N, Khim, D, Zhang, Q, Zhang, X, Pliatsikas, N, Tsetseris, L, Patsalas, P, Bradley, D, Huang, W, Anthopoulos, T

“…Metal oxide thin-film transistors are increasingly used in the driving backplanes of organic light-emitting diode displays. …”

Exciton dissociation in polymer field-effect transistors studied using terahertz spectroscopy by Lloyd-Hughes, J, Richards, T, Sirringhaus, H, Johnston, M, Herz, L

“…The transistor history is found to affect the exciton dissociation efficiency, which decreases as holes are increasingly trapped in the accumulation layer. …”

A Characterization Study of a Nanowire-Network Transistor with Various Channel Layers by Jang, J, Cha, S, Butler, T, Sohn, J, Kim, J, Jin, Y, Amaratunga, G, Jung, J, Kim, J

“…The performance of a ZnO network transistor is studied by means of the change in threshold slope with varying number of nanowire channel layers. …”

Exceptionally clean single-electron transistors from solutions of molecular graphene nanoribbons by Niu, W, Sopp, S, Lodi, A, Gee, A, Kong, F, Pei, T, Gehring, P, Nägele, J, Lau, CS, Ma, J, Liu, J, Narita, A, Mol, J, Burghard, M, Müllen, K, Mai, Y, Feng, X, Bogani, L

“…Only single-electron transistors with a certain level of cleanliness, where all states can be properly accessed, can be used for quantum experiments. …”

Nonvolatile memory functionality of ZnO nanowire transistors controlled by mobile protons. by Yoon, J, Hong, W, Jo, M, Jo, G, Choe, M, Park, W, Sohn, J, Nedic, S, Hwang, H, Welland, M, Lee, T

“…We demonstrated the nonvolatile memory functionality of ZnO nanowire field effect transistors (FETs) using mobile protons that are generated by high-pressure hydrogen annealing (HPHA) at relatively low temperature (400 °C). …”

Numerical analysis of coherent many-body currents in a single atom transistor by Daley, A, Clark, S, Jaksch, D, Zoller, P

“…We study the dynamics of many atoms in the recently proposed single-atom-transistor setup [A. Micheli, A. J. Daley, D. Jaksch, and P. …”

Tuning the ambipolar behaviour of organic field effect transistors via band engineering by Warren, P, Hardigree, J, Lauritzen, A, Nelson, J, Riede, M

“…We report on a method for fabricating balanced hole and electron transport in ambipolar organic field-effect transistors (OFETs) based on the co-evaporation of zinc-phthalocyanine (ZnPc) and its fluorinated derivative (F 8 ZnPc). …”

High-performance field effect transistors from solution processed carbon nanotubes by Wang, H, Luo, J, Robertson, A, Ito, Y, Yan, W, Lang, V, Zaka, M, Schäffel, F, Rümmeli, M, Briggs, G, Warner, J

“…Nanoelectronic field effect transistors (FETs) are produced using solution processed individual carbon nanotubes (CNTs), synthesized by both arc discharge and laser ablation methods. …”

Charge trapping in polymer transistors probed by terahertz spectroscopy and scanning probe potentiometry by Lloyd-Hughes, J, Richards, T, Sirringhaus, H, Castro-Camus, E, Herz, L, Johnston, M

“…Terahertz time-domain spectroscopy and scanning probe potentiometry were used to investigate charge trapping in polymer field-effect transistors fabricated on a silicon gate. The hole density in the transistor channel was determined from the reduction in the transmitted terahertz radiation under an applied gate voltage. …”

Radio-frequency characterization of a supercurrent transistor made of a carbon nanotube by Mergenthaler, M, Schupp, FJ, Nersisyan, A, Ares, N, Baumgartner, A, Schönenberger, C, Briggs, GAD, Leek, PJ, Laird, EA

“…A supercurrent transistor is a superconductor–semiconductor hybrid device in which the Josephson supercurrent is switched on and off using a gate voltage. …”

Cryogenic instrumentation for fast current measurement in a silicon single electron transistor by Ferrus, T, Hasko, D, Morrissey, Q, Burge, SR, Freeman, E, French, M, Lam, A, Creswell, L, Collier, R, Williams, D, Briggs, G

Quantum interference in silicon one-dimensional junctionless nanowire field-effect transistors by Schupp, F, Mirza, M, Maclaren, D, Briggs, G, Paul, D, Mol, J

“…We investigate the low-temperature transport in 8-nm-diam Si junctionless nanowire field-effect transistors fabricated by top down techniques with a wraparound gate and two different phosphorus doping concentrations. …”