Showing 1,381 - 1,400 results of 8,472 for search '"transistors"', query time: 0.11s Refine Results
  1. 1381
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  6. 1386

    Light sources with bias tunable spectrum based on van der Waals interface transistors by Hugo Henck, Diego Mauro, Daniil Domaretskiy, Marc Philippi, Shahriar Memaran, Wenkai Zheng, Zhengguang Lu, Dmitry Shcherbakov, Chun Ning Lau, Dmitry Smirnov, Luis Balicas, Kenji Watanabe, Takashi Taniguchi, Vladimir I. Fal’ko, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Alberto F. Morpurgo

    Published 2022-07-01
    “…Here, the authors report the realization of light-emitting field-effect transistors based on van der Waals heterostructures with conduction and valence band edges at the Γ-point of the Brillouin zone, showing electrically tunable and material-dependent electroluminescence spectra at room temperature.…”
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  7. 1387
  8. 1388

    Li-doping-modulated gelatin electrolyte for biodegradable electric-double-layer synaptic transistors by Zhengquan Chen, Gang He, Bing Yang, Minmin Zhu, Shanshan Jiang

    Published 2024-02-01
    “…Here, we proposed a novel electric-double-layer (EDL) synaptic transistor gated with Li-doped natural gelatin membranes, demonstrating larger capacitance at low frequency and extremely strong electrostatic modulation behavior. …”
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  9. 1389
  10. 1390

    Machine Learning-Based Modeling of Hot Carrier Injection in 40 nm CMOS Transistors by Xhesila Xhafa, Ali Dogus Gungordu, Mustafa Berke Yelten

    Published 2024-01-01
    “…This paper presents a machine-learning-based approach for the degradation modeling of hot carrier injection in metal-oxide-semiconductor field-effect transistors (MOSFETs). Stress measurement data have been employed at various stress conditions of both n- and p-MOSFETs with different channel geometries. …”
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  11. 1391
  12. 1392

    A Power-Gated 8-Transistor Physically Unclonable Function Accelerates Evaluation Speeds by Yujin Zheng, Alex Yakovlev, Alex Bystrov

    Published 2023-09-01
    “…The proposed 8-Transistor (8T) Physically Unclonable Function (PUF), in conjunction with the power gating technique, can significantly accelerate a single evaluation cycle more than 100,000 times faster than a 6-Transistor (6T) Static Random-Access Memory (SRAM) PUF. …”
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  13. 1393
  14. 1394

    Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors by Sung-Jae Chang, Kyu-Jun Cho, Sang-Youl Lee, Hwan-Hee Jeong, Jae-Hoon Lee, Hyun-Wook Jung, Sung-Bum Bae, Il-Gyu Choi, Hae-Cheon Kim, Ho-Kyun Ahn, Jong-Won Lim

    Published 2021-11-01
    “…We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. …”
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  15. 1395
  16. 1396

    A simulated fabrication and characterization of a 65 nm floating-gate MOS transistor by Thinh Dang Cong, Phuc Ton That Bao, Trang Hoang

    Published 2023-04-01
    “…The aim of this study was to virtual fabricate and characterize a Floating-gate MOS transistor of the 65 nm process. The fabrication process was designed and characterized using the TCAD Silvaco tools. …”
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  17. 1397

    Characteristics of PEALD–Hafnium Dioxide Films and their Application to Gate Insulator Stacks of Photosynaptic Transistors by Jieun Kim, Jung Wook Lim, Jaehee Lee

    Published 2022-04-01
    “…Abstract For practical applications of photosynaptic devices in neuromorphic systems, photosynaptic transistors prepared using TiO2 channels and TiO2/Al2O3 deep trap interfaces exhibit high stability and retention. …”
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    The Effect of Replacing Si-MOSFETs with WBG Transistors on the Control Loop of Voltage Source Inverters by Krzysztof Bernacki, Zbigniew Rymarski

    Published 2022-07-01
    “…This paper investigates the change in equivalent serial resistance that occurs if the standard Si-MOSFET switches are replaced with wide bandgap (WBG) transistors with correspondingly lower equivalent serial resistance. …”
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