Test Structures for the Characterization of the Gate Resistance in 16 nm FinFET RF Transistors by Mario Lauritano, Peter Baumgartner, Ahmet Çağri Ulusoy

“…The gate resistance is a parasitic element in transistors for RF and millimeter-wave circuits that can negatively impact power gain and noise figure. …”
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Individual forecasting of reliability of bipolar transistors by using electrical voltage as a simulation factor by S. M. Borovikov, E. N. Shneiderov, A. I. Berasnevich, V. O. Kaziuchyts

“…Using the example of highpower bipolar transistors of the KT872A type, it is shown how the problem is solved. …”
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Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors by Khadir Abdelkader, Sengouga Nouredine, Abdelhafidi Mohamed Kamel

“…The effect of germanium trapezoidal profile shape on the direct current (DC) current gain (βF), cut-off frequency (fT) and maximum oscillation frequency (fMAX) of silicon-germanium (SiGe) hetero-junction bipolar transistors (HBTs) has been investigated. The energy balance (EB), hydrodynamic (HD) and drift-diffusion (DD) physical transport models in SILVACO technology computer aided design (T-CAD) simulator were used. …”
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Reconfigurable Logic‐In‐Memory Cell Comprising Triple‐Gated Feedback Field‐Effect Transistors by Jongseong Han, Jaemin Son, Juhee Jeon, Yunwoo Shin, Kyoungah Cho, Sangsig Kim

Subjects: “…triple‐gated feedback field‐effect transistors…”
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Red-green-blue light sensitivity of oxide nanowire transistors for transparent display applications by Sumi Lee, Seongmin Kim, David B. Janes, M. Meyyappan, Sanghyun Ju

“…In this study, the sensitivity of oxide nanowire transistors under red (R, 470 nm), green (G, 530 nm), and blue (B, 625 nm) light illumination was investigated. …”
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Nanoscale Reconfigurable Si Transistors: From Wires to Sheets and Unto Multi‐Wire Channels by Lukas Wind, Raphael Behrle, Martien I. denHertog, Corban G. E. Murphey, James F. Cahoon, Masiar Sistani, Walter M. Weber

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Machine-Learning-Based Compact Modeling for Sub-3-nm-Node Emerging Transistors by SangMin Woo, HyunJoon Jeong, JinYoung Choi, HyungMin Cho, Jeong-Taek Kong, SoYoung Kim

“…In this paper, we present an artificial neural network (ANN)-based compact model to evaluate the characteristics of a nanosheet field-effect transistor (NSFET), which has been highlighted as a next-generation nano-device. …”
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Double-Heterostructure Resonant Tunneling Transistors of Surface-Functionalized Sb and Bi Monolayer Nanoribbons by Qi Gong, Guiling Zhang

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High-Temperature Annealing Effects on Atomically Thin Tungsten Diselenide Field-Effect Transistor by Muhammad Atif Khan, Muhammad Qasim Mehmood, Yehia Massoud

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Aqueous electrolyte-gated solution-processed metal oxide transistors for direct cellular interfaces by Dong-Hee Kang, Jun-Gyu Choi, Won-June Lee, Dongmi Heo, Sungrok Wang, Sungjun Park, Myung-Han Yoon

“…Biocompatible field-effect-transistor-based biosensors have drawn attention for the development of next-generation human-friendly electronics. …”
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A Single Polyaniline Nanofiber Field Effect Transistor and Its Gas Sensing Mechanisms by Yuquan Chen, Sheng Lei, Dajing Chen

“…A single polyaniline nanofiber field effect transistor (FET) gas sensor fabricated by means of electrospinning was investigated to understand its sensing mechanisms and optimize its performance. …”
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Black Phosphorus Field-Effect Transistors with Improved Contact via Localized Joule Heating by Fangyuan Shi, Shengguang Gao, Qichao Li, Yanming Zhang, Teng Zhang, Zhiyan He, Kunchan Wang, Xiaowo Ye, Jichao Liu, Shenghao Jiang, Changxin Chen

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Electronic Poiseuille flow in hexagonal boron nitride encapsulated graphene field effect transistors by Wenhao Huang, Tathagata Paul, Kenji Watanabe, Takashi Taniguchi, Mickael L. Perrin, Michel Calame

“…In the current work, we investigate the electronic signatures of such a viscous charge flow in high-mobility graphene field effect transistors (FETs). In two complementary measurement schemes, we monitor differential resistance of graphene for different channel widths and for different effective electron temperatures. …”
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An Amorphous Native Oxide Shell for High Bias‐Stress Stability Nanowire Synaptic Transistor by Xinming Zhuang, Zixu Sa, Jie Zhang, Mingxu Wang, Mingsheng Xu, Fengjing Liu, Kepeng Song, Tao He, Feng Chen, Zai‐xing Yang

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Investigation on the Hump Behavior of Gate-Normal Nanowire Tunnel Field-Effect Transistors (NWTFETs) by Min Woo Kang, Woo Young Choi

Subjects: “…gate-normal nanowire tunnel field-effect transistor (NWTFET)…”
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Magnetic and Electric Field Dependent Charge Transfer in Perovskite/Graphene Field Effect Transistors by Nathan D. Cottam, Jonathan S. Austin, Chengxi Zhang, Amalia Patanè, Walter Escoffier, Michel Goiran, Mathieu Pierre, Camilla Coletti, Vaidotas Mišeikis, Lyudmila Turyanska, Oleg Makarovsky

“…The performance of these perovskite/graphene field effect transistors (FET) is mediated by charge transfer processes at the perovskite – graphene interface. …”
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Quantitative Hot Carrier Injection Analysis of N-Type Tunnel Field-Effect Transistors by Jae Seung Woo, Jang Woo Lee, Woo Young Choi

Subjects: “…Tunnel field-effect transistors (TFETs)…”
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Laser slice thinning of GaN-on-GaN high electron mobility transistors by Atsushi Tanaka, Ryuji Sugiura, Daisuke Kawaguchi, Yotaro Wani, Hirotaka Watanabe, Hadi Sena, Yuto Ando, Yoshio Honda, Yasunori Igasaki, Akio Wakejima, Yuji Ando, Hiroshi Amano

“…We demonstrated the thinning of GaN-on-GaN high-electron-mobility transistors (HEMTs) using a laser slicing technique. …”
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An Electrolyte-Gated Graphene Field-Effect Transistor for Detection of Gadolinium(III) in Aqueous Media by Charlène Gadroy, Rassen Boukraa, Nicolas Battaglini, Franck Le Derf, Nadine Mofaddel, Julien Vieillard, Benoît Piro

Subjects: “…electrolyte-gated graphene transistor…”
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Immuno-Sensing at Ultra-Low Concentration of TG2 Protein by Organic Electrochemical Transistors by Valentina Preziosi, Mario Barra, Valeria Rachela Villella, Speranza Esposito, Pasquale D’Angelo, Simone Luigi Marasso, Matteo Cocuzza, Antonio Cassinese, Stefano Guido

Subjects: “…organic electrochemical transistors…”
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