Showing 1,461 - 1,480 results of 8,472 for search '"transistors"', query time: 0.12s Refine Results
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    Synthesis and Effect of the Structure of Bithienyl-Terminated Surfactants for Dielectric Layer Modification in Organic Transistor by Lucia Feriancová, Iveta Kmentová, Michal Micjan, Milan Pavúk, Martin Weis, Martin Putala

    Published 2021-10-01
    “…Surfactants were tested in pentacene or α-sexithiophene-based organic field-effect transistors (OFETs) for the modification of the dielectric surface. …”
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    Article
  6. 1466

    Current-Voltage Modeling of DRAM Cell Transistor Using Genetic Algorithm and Deep Learning by Jun Hui Park, Jung Nam Kim, Seonhaeng Lee, Gang-Jun Kim, Namhyun Lee, Rock-Hyun Baek, Dae Hwan Kim, Changhyun Kim, Myounggon Kang, Yoon Kim

    Published 2024-01-01
    “…However, the current BSIM model does not support a buried-channel-array transistor (BCAT), which is the structure of the state-of-the-art commercial dynamic random access memory (DRAM) cell transistor. …”
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  7. 1467

    Core-insulator embedded nanosheet field-effect transistor for suppressing device-to-device variations by Donghwi Son, Hyunwoo Lee, Hyunsoo Kim, Jae-Hyuk Ahn, Sungho Kim

    Published 2024-03-01
    “…Abstract Nanosheet field-effect transistors (NSFETs) have attracted considerable attention for their potential to achieve improved performance and energy efficiency compared to traditional FinFETs. …”
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    Acrylamide Hydrogel-Modified Silicon Nanowire Field-Effect Transistors for pH Sensing by Gangrong Li, Qianhui Wei, Shuhua Wei, Jing Zhang, Qingxi Jin, Guozhi Wang, Jiawei Hu, Yan Zhu, Yun Kong, Qingzhu Zhang, Hongbin Zhao, Feng Wei, Hailing Tu

    Published 2022-06-01
    “…In this study, we report a pH-responsive hydrogel-modified silicon nanowire field-effect transistor for pH sensing, whose modification is operated by spin coating, and whose performance is characterized by the electrical curve of field-effect transistors. …”
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  11. 1471

    Dynamic properties of a two-phase boost converter with soft-switching transistors technology by Robert Dixon, Yuriy Dementyev, Genadiy Mikhalchenko, Sergey Gennadievich Mikhalchenko, Sergey Semenov

    Published 2019-05-01
    “…Hence, reducing the dynamic losses of the transistors crystalline structure and including the reduction of electromagnetic interference (EMI) occurrences. …”
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    Ultrashort vertical-channel MoS2 transistor using a self-aligned contact by Liting Liu, Yang Chen, Long Chen, Biao Xie, Guoli Li, Lingan Kong, Quanyang Tao, Zhiwei Li, Xiaokun Yang, Zheyi Lu, Likuan Ma, Donglin Lu, Xiangdong Yang, Yuan Liu

    Published 2024-01-01
    “…Abstract Two-dimensional (2D) semiconductors hold great promises for ultra-scaled transistors. In particular, the gate length of MoS2 transistor has been scaled to 1 nm and 0.3 nm using single wall carbon nanotube and graphene, respectively. …”
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    Analysis of Standard-MOS and Ultra-Low-Power Diodes Composed by SOI UTBB Transistors by Fernando Jose da Costa, Renan Trevisoli, Rodrigo Trevisoli Doria

    Published 2023-01-01
    “…The main objective of this work is to present an analysis of the performance of Ultra-Thin-Body and Buried Oxide transistors working as Ultra-Low-Power and standard-nMOS diodes. …”
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  18. 1478

    The Impact of Ambient Temperature on Electrothermal Characteristics in Stacked Nanosheet Transistors with Multiple Lateral Stacks by Peng Zhao, Lei Cao, Guilei Wang, Zhenhua Wu, Huaxiang Yin

    Published 2023-11-01
    “…In this paper, the impact of ambient temperature (<i>T</i><sub>amb</sub>) on the SHE in stacked nanosheet transistors is investigated. As the number of lateral stacks (<i>N</i><sub>stack</sub>) increases, the nanoscale devices show more severe thermal crosstalk issues, and the current performance between n- and p-type nanoscale transistors exhibits different degradation trends. …”
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