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1481
Solution-Processed Titanium Dioxide Ion-Gated Transistors and Their Application for pH Sensing
Published 2022-03-01Subjects: Get full text
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1482
AC amplification gain in organic electrochemical transistors for impedance-based single cell sensors
Published 2022-09-01“…The authors develop a quantitative description of alternating current amplification gain in organic electrochemical transistors. The findings are applied to achieve detection of single glioblastoma cell adhesion with 20 dB gain compared to microelectrodes.…”
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1483
Dual-Mode Graphene Field-Effect Transistor Biosensor with Isothermal Nucleic Acid Amplification
Published 2024-02-01Subjects: “…graphene field-effect transistor…”
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1484
Flexible devices for eco-sustainable electronics: Natural polysaccharide as gate dielectric in organic transistors
Published 2024-04-01“…The device can sustain the transistor performance even after application of 200 bending cycles. …”
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1485
Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing
Published 2024-01-01Subjects: “…junctionless field-effect transistor…”
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1486
Diselenophene‐Dithioalkylthiophene Based Quinoidal Small Molecules for Ambipolar Organic Field Effect Transistors
Published 2024-03-01Subjects: Get full text
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1487
Nitrogenous Interlayers for ITO S/D Electrodes in N‐Type Organic Thin Film Transistors
Published 2023-03-01Subjects: Get full text
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1488
Solution-processed thickness engineering of tellurene for field-effect transistors and polarized infrared photodetectors
Published 2022-10-01Subjects: Get full text
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1489
High performance carbon nanotubes thin film transistors by selective ferric chloride doping
Published 2023-04-01Subjects: Get full text
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1490
Vertical‐Resolved Composition and Aggregation Gradient of Conjugated‐Polymer@Insulator‐Matrix for Transistors and Memory
Published 2020-04-01Subjects: “…organic field‐effect transistors…”
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1491
Analysis of static behavior of ion sensitive field effect Transistor for pH measurements
Published 2022-01-01“…The Ion-Sensitive Field-Effect Transistor (ISFET) is one of the most popular pH sensors traditionally using to measure hydrogen ion concentration (pH) of the electrolytic solutions. …”
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1492
Narrow-Width Effects in 28-nm FD-SOI Transistors Operating at Cryogenic Temperatures
Published 2023-01-01“…In this paper, we present on the cryogenic characterization of short channel 28-nm FD-SOI nMOS and pMOS transistors having widths of the <inline-formula> <tex-math notation="LaTeX">$1 ~\mu \text{m}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$0.08 ~\mu \text{m}$ </tex-math></inline-formula> at temperatures ranging from T = 300 K down to T = 10 K. …”
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1493
Floating Gate Transistor‐Based Accurate Digital In‐Memory Computing for Deep Neural Networks
Published 2022-12-01Subjects: Get full text
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1494
Low-Power Pass-Transistor Logic-Based Full Adder and 8-Bit Multiplier
Published 2023-07-01Subjects: Get full text
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1495
Ultra-wide bandgap amorphous oxide semiconductors for NBIS-free thin-film transistors
Published 2019-02-01“…We show that a-ZGO thin-film transistors exhibit no negative-bias illumination-stress instability with no passivation and no light-shielding layer.…”
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1496
AlGaN Channel High Electron Mobility Transistors with Regrown Ohmic Contacts
Published 2021-03-01Subjects: “…high-electron-mobility-transistor (HEMT)…”
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1497
Molecular Recognition by Silicon Nanowire Field-Effect Transistor and Single-Molecule Force Spectroscopy
Published 2022-01-01Subjects: Get full text
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1498
Molecular Tailoring to Achieve Long‐Term Plasticity in Organic Synaptic Transistors for Neuromorphic Computing
Published 2023-09-01Subjects: Get full text
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1499
On the Development of Label-Free DNA Sensor Using Silicon Nanonet Field-Effect Transistors
Published 2017-08-01Subjects: Get full text
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1500
Logic‐In‐Memory Characteristics of Reconfigurable Feedback Field‐Effect Transistors with Double‐Gated Structure
Published 2023-08-01“…Abstract The reconfigurable feedback field‐effect transistors (R‐FBFETs) with a double‐gated structure are designed and the logic and memory operations of a logic‐in‐memory (LIM) inverter comprising two R‐FBFETs are investigated. …”
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