Showing 1,481 - 1,500 results of 8,472 for search '"transistors"', query time: 0.16s Refine Results
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    AC amplification gain in organic electrochemical transistors for impedance-based single cell sensors by Filippo Bonafè, Francesco Decataldo, Isabella Zironi, Daniel Remondini, Tobias Cramer, Beatrice Fraboni

    Published 2022-09-01
    “…The authors develop a quantitative description of alternating current amplification gain in organic electrochemical transistors. The findings are applied to achieve detection of single glioblastoma cell adhesion with 20 dB gain compared to microelectrodes.…”
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  3. 1483
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    Flexible devices for eco-sustainable electronics: Natural polysaccharide as gate dielectric in organic transistors by Gargi Konwar, Shree Prakash Tiwari

    Published 2024-04-01
    “…The device can sustain the transistor performance even after application of 200 bending cycles. …”
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    Analysis of static behavior of ion sensitive field effect Transistor for pH measurements by Kevkić Tijana, Maity Reshmi, Todorović Dragana, Vučković Biljana, Maity N. P.

    Published 2022-01-01
    “…The Ion-Sensitive Field-Effect Transistor (ISFET) is one of the most popular pH sensors traditionally using to measure hydrogen ion concentration (pH) of the electrolytic solutions. …”
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  12. 1492

    Narrow-Width Effects in 28-nm FD-SOI Transistors Operating at Cryogenic Temperatures by Anuj Bhardwaj, Sujit. K. Singh, Abhisek Dixit

    Published 2023-01-01
    “…In this paper, we present on the cryogenic characterization of short channel 28-nm FD-SOI nMOS and pMOS transistors having widths of the <inline-formula> <tex-math notation="LaTeX">$1 ~\mu \text{m}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$0.08 ~\mu \text{m}$ </tex-math></inline-formula> at temperatures ranging from T &#x003D; 300 K down to T &#x003D; 10 K. …”
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    Ultra-wide bandgap amorphous oxide semiconductors for NBIS-free thin-film transistors by Junghwan Kim, Joonho Bang, Nobuhiro Nakamura, Hideo Hosono

    Published 2019-02-01
    “…We show that a-ZGO thin-film transistors exhibit no negative-bias illumination-stress instability with no passivation and no light-shielding layer.…”
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    Logic‐In‐Memory Characteristics of Reconfigurable Feedback Field‐Effect Transistors with Double‐Gated Structure by Yunwoo Shin, Jaemin Son, Juhee Jeon, Kyoungah Cho, Sangsig Kim

    Published 2023-08-01
    “…Abstract The reconfigurable feedback field‐effect transistors (R‐FBFETs) with a double‐gated structure are designed and the logic and memory operations of a logic‐in‐memory (LIM) inverter comprising two R‐FBFETs are investigated. …”
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