Interface engineering for organic−inorganic hybrid perovskite solar cells by Foo, Shini

“…To address these challenges, intensive developments have been made recently to interfacial engineering so as to reduce the amount of undesirable trap states in OIHP solar cells. Although significant progress has been made to improve the device performance and stability of OIHP solar cells using interfacial engineering, the preferable properties of passivation material utilized at various interfaces are often overlooked. …”
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2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure by Patwal, Shashank

“…The subsequent GaN channel layer was optimized to be grown at 720 ºC with minimal relaxation at nearly stoichiometric condition (III/V = 1.05).The AGA heterostructure was completed with an AlN barrier layer grown at near stoichiometric (III/V~1) growth condition and a 2 nm GaN cap layer. The AlN barrier and GaN channel combination of 3 nm and 43 nm thickness resulted in 2DEG density of 2.16×1013 cm-2 and carrier mobility of 528 cm2/V. s. …”
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