2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure by Patwal, Shashank

“…The subsequent GaN channel layer was optimized to be grown at 720 ºC with minimal relaxation at nearly stoichiometric condition (III/V = 1.05).The AGA heterostructure was completed with an AlN barrier layer grown at near stoichiometric (III/V~1) growth condition and a 2 nm GaN cap layer. The AlN barrier and GaN channel combination of 3 nm and 43 nm thickness resulted in 2DEG density of 2.16×1013 cm-2 and carrier mobility of 528 cm2/V. s. …”
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