Tracing RNA biography: in situ transcriptome profiling by novel spatial omics technologies by Ren, Jingyi (Rena)

“…My goal was to better grasp the link between gene function and RNA lifespan at a genomic level across different cell types. …”
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VR-CFD : interactive simulation of computational fluid dynamics by Yang, Sida

“…The developed VR-CFD application utilized an attractive design with bright colours, familiar game characters and game-like user interface aimed to make the introductory CFD class fun, interactive and engaging, helping students intuitively grasp the physics concepts. It is hoped that with further development on the early prototype demonstrated in this paper, the VR-CFD application could truly contribute to students’ learning in fluid dynamics problems and how CFD is used to solve them, therefore revolutionizing the way traditional mechanical engineering subjects are taught in class.…”
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论王畿的 “三教合一” 观 = Wang Ji's thought and "Unity of the Three Teachings" by 陈碧琪 Tan, BiQi

“…Similar to Wang Yangming, Wang Ji’s position is based on Confucianism, where he sees Confucianism as having fully grasped the nature of the heart-mind. On the other hand, Buddhism and Daoism only possess a partial understanding. …”
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Towards electrically injected colloidal semiconductor lasers by Thung, Yi Tian

“…Addressing this gap, I explored electrical charge injection into Br--capped CdSe NPLs using an inverted p-i-n device architecture, resulting in narrow electroluminescence at 530 nm. …”
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Graph representation learning by Zhang, Xinyi

“…We first focus on GNN-based methods and propose Capsule Graph Neural Network (CapsGNN), which is a novel message-passing-based architecture for graph-level representation learning. …”
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2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure by Patwal, Shashank

“…The subsequent GaN channel layer was optimized to be grown at 720 ºC with minimal relaxation at nearly stoichiometric condition (III/V = 1.05).The AGA heterostructure was completed with an AlN barrier layer grown at near stoichiometric (III/V~1) growth condition and a 2 nm GaN cap layer. The AlN barrier and GaN channel combination of 3 nm and 43 nm thickness resulted in 2DEG density of 2.16×1013 cm-2 and carrier mobility of 528 cm2/V. s. …”
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