Showing 261 - 266 results of 266 for search '(("rapping" OR "capping") OR (("wrapping" OR "grasping") OR "wtrapping"))', query time: 0.15s Refine Results
  1. 261

    论王畿的 “三教合一” 观 = Wang Ji's thought and "Unity of the Three Teachings" by 陈碧琪 Tan, BiQi

    Published 2023
    “…Similar to Wang Yangming, Wang Ji’s position is based on Confucianism, where he sees Confucianism as having fully grasped the nature of the heart-mind. On the other hand, Buddhism and Daoism only possess a partial understanding. …”
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    Final Year Project (FYP)
  2. 262

    Leveraging linguistic knowledge to enhance low-resource NLP applications by Zhu, Zixiao

    Published 2025
    “…Within this paradigm, fixed-prompt LM tuning wraps input sentences into a template, allowing the PLM to engage in tasks like masked language prediction or inference understanding. …”
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    Thesis-Doctor of Philosophy
  3. 263

    Fabrication and characterization of graphene and carbon nanotube reinforced bioceramic nanocomposites by Hu, Huanlong

    Published 2020
    “…In rGO-HA composites, the rGO plates with large lateral dimensions could wrap HA grains for finer and layered microstructures for higher hardness. …”
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    Thesis-Doctor of Philosophy
  4. 264

    Towards electrically injected colloidal semiconductor lasers by Thung, Yi Tian

    Published 2025
    “…Addressing this gap, I explored electrical charge injection into Br--capped CdSe NPLs using an inverted p-i-n device architecture, resulting in narrow electroluminescence at 530 nm. …”
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    Thesis-Doctor of Philosophy
  5. 265

    Graph representation learning by Zhang, Xinyi

    Published 2022
    “…We first focus on GNN-based methods and propose Capsule Graph Neural Network (CapsGNN), which is a novel message-passing-based architecture for graph-level representation learning. …”
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    Thesis-Doctor of Philosophy
  6. 266

    2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure by Patwal, Shashank

    Published 2021
    “…The subsequent GaN channel layer was optimized to be grown at 720 ºC with minimal relaxation at nearly stoichiometric condition (III/V = 1.05).The AGA heterostructure was completed with an AlN barrier layer grown at near stoichiometric (III/V~1) growth condition and a 2 nm GaN cap layer. The AlN barrier and GaN channel combination of 3 nm and 43 nm thickness resulted in 2DEG density of 2.16×1013 cm-2 and carrier mobility of 528 cm2/V. s. …”
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    Thesis-Doctor of Philosophy