论王畿的 “三教合一” 观 = Wang Ji's thought and "Unity of the Three Teachings" by 陈碧琪 Tan, BiQi

“…Similar to Wang Yangming, Wang Ji’s position is based on Confucianism, where he sees Confucianism as having fully grasped the nature of the heart-mind. On the other hand, Buddhism and Daoism only possess a partial understanding. …”
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Leveraging linguistic knowledge to enhance low-resource NLP applications by Zhu, Zixiao

“…Within this paradigm, fixed-prompt LM tuning wraps input sentences into a template, allowing the PLM to engage in tasks like masked language prediction or inference understanding. …”
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Fabrication and characterization of graphene and carbon nanotube reinforced bioceramic nanocomposites by Hu, Huanlong

“…In rGO-HA composites, the rGO plates with large lateral dimensions could wrap HA grains for finer and layered microstructures for higher hardness. …”
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Towards electrically injected colloidal semiconductor lasers by Thung, Yi Tian

“…Addressing this gap, I explored electrical charge injection into Br--capped CdSe NPLs using an inverted p-i-n device architecture, resulting in narrow electroluminescence at 530 nm. …”
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Low complexity spectrum sensing for cognitive radio enabled aeronautical communication systems by Koodathumkal Mathew Libin

“…In the proposed scheme, the sampling and quantization unit is reduced to a high-speed comparator, and the multiplication in each filter tap is replaced by a sign changer, which is implemented using a 2’s complement circuit and a 2:1 multiplexer. …”
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Graph representation learning by Zhang, Xinyi

“…We first focus on GNN-based methods and propose Capsule Graph Neural Network (CapsGNN), which is a novel message-passing-based architecture for graph-level representation learning. …”
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2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure by Patwal, Shashank

“…The subsequent GaN channel layer was optimized to be grown at 720 ºC with minimal relaxation at nearly stoichiometric condition (III/V = 1.05).The AGA heterostructure was completed with an AlN barrier layer grown at near stoichiometric (III/V~1) growth condition and a 2 nm GaN cap layer. The AlN barrier and GaN channel combination of 3 nm and 43 nm thickness resulted in 2DEG density of 2.16×1013 cm-2 and carrier mobility of 528 cm2/V. s. …”
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