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  1. 261

    InAlN/GaN high electron mobility transistors on Si for RF applications by Xing, Weichuan

    Published 2018
    “…The results show that the Planar nanostrip-channel Al2O3/InAlN/GaN MISHEMTs is able to work at up to Vg = +4 V and the linearity performance was further improved. Two-tone intermodulation characterizations are discussed for conventional HEMT, Planar nanostrip-channel HEMT and MISHEMT. …”
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    Thesis
  2. 262

    论阮籍诗文中的逃避主义 = Escapism in the literary works of Ruan Ji by 王岳明 Wang, Yueming

    Published 2014
    “…Lastly, this paper will conclude that even though escapism exists in both Ruan and Tao’s literary works, Ruan’s expression of escaping and Tao’s expression of seeking reclusion is but variable melodies of a similar tone. The last chapter questions whether Chu Ci which was written before Ruan Ji contains escapism. …”
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    Final Year Project (FYP)