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    InAlN/GaN high electron mobility transistors on Si for RF applications by Xing, Weichuan

    Published 2018
    “…The results show that the Planar nanostrip-channel Al2O3/InAlN/GaN MISHEMTs is able to work at up to Vg = +4 V and the linearity performance was further improved. …”
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    Thesis
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