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    InAlN/GaN high electron mobility transistors on Si for RF applications

    InAlN/GaN high electron mobility transistors on Si for RF applications by Xing, Weichuan

    Published 2018
    “…Maximum fT of 250 GHz was obtained in a 40-nm gate device, which is the highest among any other GaN HEMTs demonstrated on Si substrate previously. …”
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    Thesis

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