Showing 81 - 100 results of 1,396 for search '((((fare OR ((fate OR date) OR gate)) OR face) OR rate) OR (full OR far)) 40', query time: 0.21s Refine Results
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    Strategies to increase response rate and reduce non-response bias in population health research: a series of randomised controlled trials during a large COVID-19 study by Atchison, CJ, Gilby, N, Pantelidou, G, Clemens, S, Pickering, K, Chadeau-Hyam, M, Ashby, D, Barclay, WS, Cooke, G, Darzi, A, Riley, S, Donnelly, C, Ward, H, Elliott, P

    Published 2025
    “…Those receiving an additional text message were more likely to return a completed swab compared to those receiving the standard approach, 73.3% v 70.2%: percentage difference 3.1% (95% CI 2.2%, 4.0%).</p> <br> <p><strong>Conclusions:</strong> Conditional monetary incentives improved response rate to an online survey which required the return of a swab test, particularly for younger age groups. …”
    Journal article
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    Low power ALU design by Jin, Yuhao

    Published 2018
    “…The simulation, comparison and analysis of existing logic and arithmetic units have been done, including logic AND gate, logic OR gate, logic XOR gate, logic NOT gate, multiplexer, full adder, multiplier and so on. …”
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    Thesis
  5. 85

    High speed low power CMOS data compressor design and analysis by Radhakrishnan, Sathiya Priyanka

    Published 2019
    “…These schematic simulations are done in Cadence Virtuoso software with TSMC 40nm technology library and the results are studied and concluded saying transmission gate, dynamic logic and 10T XOR gates show better results among all in which transmission gate logic showed good performance results used to construct 4:2 and 8:2 CMOS data compressor.…”
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    Thesis
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    Improvement of CZTS solar cell by hydrogen doping by Chua, Maynard Wen De

    Published 2019
    “…The highest average efficiency is achieved at 4.44% for CZTS absorber layer hydrogenated at 200°C, 30 minutes and H2 gas flow rate of 40 sccm. The average efficiency of the non-hydrogenated sample is 3.53%.…”
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    Final Year Project (FYP)
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    InAlN/GaN high electron mobility transistors on Si for RF applications by Xing, Weichuan

    Published 2018
    “…Maximum fT of 250 GHz was obtained in a 40-nm gate device, which is the highest among any other GaN HEMTs demonstrated on Si substrate previously. …”
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    Thesis
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    Faculty CV system by Zeng, Ziyao

    Published 2021
    “…However, CVs are typically 40 pages long, which are cumbersome for human management. …”
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    Final Year Project (FYP)