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    Unveiling the dual role of chemically synthesized copper doped zinc oxide for resistive switching applications by Gollu, Sankara Rao, Roy, Sounak, Banerjee, Souri, Kundu, Souvik, Boppidi, Pavan Kumar Reddy, Raj, P. Michael Preetam, Challagulla, Swapna

    Published 2019
    “…X-ray diffraction, high resolution transmission electron microscope, x-ray photoelectron spectroscopy, UV-VIS-near infrared spectrometer, and piezoelectric force microscopy (PFM) were employed to study the crystallinity, interfaces, chemical compositions, bandgap, and domains in Cu:ZnO thin films, respectively. The bandgap of Cu:ZnO was found to be 3.20 eV. …”
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    Journal Article
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