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    A self-rectifying unipolar HfOx based RRAM using doped germanium bottom electrode by Liu, W. J., Tran, Xuan Anh, Sun, Xiaowei, Yu, Hongyu

    Published 2013
    “…The RRAM cells exhibit a stable unipolar resistive switching behavior. Owning to Schottky barrier between defect states in HfOx layer and n-Ge substrate, RRAM cells possess a self-rectifying behavior in LRS which eliminates the read-out errors induced by leakage current paths in cross-bar array structure. …”
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    Journal Article
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