Fabrication and characterization of Algan/Gan high electron mobility transistors on silicon by Tham, Wai Hoe

“…Therefore, another important objective of this report is to investigate the effect of Germanium diffusion on shifting the threshold voltage of AlGaN/GaN HEMT at the gate region. Si and Ge are generally used as n-type dopants in AlGaN/GaN epilayers. …”
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Tsewang Norbu NGB by Cantwell, C, Mayer, R

“…However, the significance of such regional factors is not yet clear. While probably insignificant to the doxographical arrangements of texts within the editions (which of course reflects doctrinal thinking), regionality might however be of much greater significance in terms of the actual exemplars used for copying, and hence to transmissional and text-critical concerns of all kinds.…”