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  1. 2781
    Fabrication and characterization of Algan/Gan high electron mobility transistors on silicon

    Fabrication and characterization of Algan/Gan high electron mobility transistors on silicon by Tham, Wai Hoe

    Published 2016
    “…Therefore, another important objective of this report is to investigate the effect of Germanium diffusion on shifting the threshold voltage of AlGaN/GaN HEMT at the gate region. Si and Ge are generally used as n-type dopants in AlGaN/GaN epilayers. …”
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    Thesis

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