Showing 281 - 300 results of 10,237 for search '((((sping OR shing) OR ((spinl OR (spine OR thin)) OR pina)) OR five) OR (spins OR min))', query time: 0.26s Refine Results
  1. 281
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    Profile of optical constants of SiO2 thin films containing Si nanocrystals by Dong, Gui, Chen, Tupei, Liu, Yang, Tse, Man Siu, Fung, Stevenson Hon Yuen

    Published 2010
    “…For optoelectronic and photonic applications of Si nanocrystals (nc-Si) embedded in a SiO2 matrix, the information of the depth profiles of the optical constants for the thin film system is necessary. In this work, an approach of the depth profiling for the thin film synthesized with ion implantation is developed. …”
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    Journal Article
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    Characterization of negative bias temperature instability in ultra-thin oxynitride gate P-MOSFETs by Wang, Shuang

    Published 2009
    “…Contrary to the single activation energy of the conventional SiO2 gate p-MOSFET, two distinct activation energies were obtained on ultra-thin oxynitride gate p-MOSFETs. One of the activation energy coincides with that obtained from the R-D model on SiO2 gate p-MOSFET; while the other activation energy is much smaller, representing a thermally-insensitive mechanism. …”
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    Thesis
  8. 288

    Noble metal alloy thin films by atomic layer deposition and rapid Joule heating by Guo, Yuanyuan, Zou, Yiming, Cheng, Chunyu, Wang, Leyan, Made, Riko I., Goei, Ronn, Tan, Kwan Wee, Li, Shuzhou, Tok, Alfred Iing Yoong

    Published 2022
    “…This manuscript details a new method of fabricating Rhodium-Iridium (Rh-Ir) metal alloy films using atomic layer deposition (ALD) and rapid Joule heating induced alloying that gives functional thin film alloys, enabling conformal thin films with high aspect ratios on 3D nanostructured substrate. …”
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    Journal Article
  9. 289

    Optical properties of aluminum-doped zinc oxide thin films for solar cell application by Heng, Shu Wei.

    Published 2009
    “…In the current project, effect of different deposition parameters on the optical properties of aluminum-doped zinc oxide thin films was investigated. The AZO thin films were prepared onto glass substrate under different deposition conditions by magnetron sputtering. …”
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    Final Year Project (FYP)
  10. 290

    Ferroelastic strain induced antiferroelectric-ferroelectric phase transformation in multilayer thin film structures by Mirshekarloo, Meysam Sharifzadeh, Yao, Kui, Sritharan, Thirumany

    Published 2013
    “…Coupling effects among mechanical, electrical and magnetic parameters in thin film structures including ferroic thin films provide exciting opportunity for creating device functionalities. …”
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    Journal Article
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    Measuring spin polarization of Cu-doped bulk indium tin oxide using point contact Andreev reflection method. by Tan, Lihao.

    Published 2009
    “…Spin polarization of a novel material is of interest to researcher in the field of spintronic devices. …”
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    Final Year Project (FYP)
  15. 295

    Giant photonic spin Hall effect empowered by polarization-dependent quasibound states in the continuum in compound grating waveguide structures by Wu, Feng, Liu, Tingting, Long, Yang, Xiao, Shuyuan, Chen, Gengyan

    Published 2023
    “…The photonic spin Hall effect (PSHE) plays an important role in both fundamental science and precision metrology. …”
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    Journal Article
  16. 296

    The five-year itch: motivational factors that influence the career decisions of early career teachers in England by Procter-Legg, T, Snell, R, Klassen, R

    Published 2025
    “…All participants had less than five years teaching experience and were selected through purposive sampling. …”
    Journal article
  17. 297

    A 0.4 V, 12.2 pW leakage, 36.5 fJ/step switching efficiency data retention flip-flop in 22 nm FDSOI by Ji, Yuxin, Zhang, Yuhang, Chen, Changyan, Zhao, Jian, Rokhani, Fakhrul Zaman, Ismail, Yehea, Li, Yongfu

    Published 2024
    “…Our proposed DR-FFs consume the lowest active mode switching efficiency of 36.5 fJ/step, 1.2 × -4 × less than the prior works, and a comparable transition efficiency of 1.9 fJ/step. …”
    Article
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