Showing 6,301 - 6,305 results of 6,305 for search '((((town OR tsung) OR (toru OR tor)) OR ours) OR urn)', query time: 0.15s Refine Results
  1. 6301

    Electronic cigarettes for smoking cessation by Lindson, N, Butler, AR, McRobbie, H, Bullen, C, Hajek, P, Begh, R, Theodoulou, A, Notley, C, Rigotti, NA, Turner, T, Livingstone-Banks, J, Morris, T, Hartmann-Boyce, J

    Published 2024
    “…Of the included studies, we rated ten (all but one contributing to our main comparisons) at low risk of bias overall, 58 at high risk overall (including all non-randomized studies), and the remainder at unclear risk. …”
    Journal article
  2. 6302

    Understanding lived experiences of bereaved parents of children with chronic life-threatening Illness : towards a culture-specific and meaning-oriented narrative E-writing interven... by Dutta, Oindrila

    Published 2020
    “…The overarching motivation of Study 2 was to bridge the research gap in our understanding of parental grief and bereavement due to child loss within the Asian context which had been identified in Study 1. …”
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    Thesis-Doctor of Philosophy
  3. 6303

    Evaluation of Enterococcus hirae isolated from vegetable wastes as probiotic and improvement of immune response in African catfish (Clarias spp.) by Hamid, Nur Hidayahanum

    Published 2022
    “…In conclusion, to the best of our knowledge, the results from this study had demonstrated that E. hirae as a potential probiont for aquaculture for the first time…”
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    Thesis
  4. 6304

    Studies on GaN based HEMT heterostructures on 100-mm silicon grown by molecular beam epitaxy by Ravikiran Lingaparthi

    Published 2015
    “…Two and one orders of reduction in the HLC and VLC were observed, respectively for the GaN buffer doped with the maximum available CBr4 BEP of 1.86× 10-7 mTorr in our system. AlGaN/GaN HEMT heterostructures grown using the carbon doped GaN buffer with 200 nm thick undoped GaN near the channel exhibited good 2DEG characteristics and reduction in the buffer leakage current by two orders of magnitude. …”
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    Thesis
  5. 6305

    Fabrication and characterization of Algan/Gan high electron mobility transistors on silicon by Tham, Wai Hoe

    Published 2016
    “…In addition, the fabricated MISHEMTs exhibit excellent ION/IOFF ratio and good sub threshold swing characteristics, which reflects on the good quality of our gate stack approach. Such fabrication method reduces the parasitic inhomogeneities associated with the numerous front-end processing steps and offers more flexibility in device design with limited form factor. …”
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    Thesis