Search alternatives:
town » own (Expand Search), down (Expand Search)
tsung » sung (Expand Search), trung (Expand Search), tseng (Expand Search)
toru » torus (Expand Search), torn (Expand Search), tou (Expand Search)
ours » hours (Expand Search), our (Expand Search)
town » own (Expand Search), down (Expand Search)
tsung » sung (Expand Search), trung (Expand Search), tseng (Expand Search)
toru » torus (Expand Search), torn (Expand Search), tou (Expand Search)
ours » hours (Expand Search), our (Expand Search)
-
6301
Electronic cigarettes for smoking cessation
Published 2024“…Of the included studies, we rated ten (all but one contributing to our main comparisons) at low risk of bias overall, 58 at high risk overall (including all non-randomized studies), and the remainder at unclear risk. …”
Journal article -
6302
Understanding lived experiences of bereaved parents of children with chronic life-threatening Illness : towards a culture-specific and meaning-oriented narrative E-writing interven...
Published 2020“…The overarching motivation of Study 2 was to bridge the research gap in our understanding of parental grief and bereavement due to child loss within the Asian context which had been identified in Study 1. …”
Get full text
Thesis-Doctor of Philosophy -
6303
Evaluation of Enterococcus hirae isolated from vegetable wastes as probiotic and improvement of immune response in African catfish (Clarias spp.)
Published 2022“…In conclusion, to the best of our knowledge, the results from this study had demonstrated that E. hirae as a potential probiont for aquaculture for the first time…”
Get full text
Thesis -
6304
Studies on GaN based HEMT heterostructures on 100-mm silicon grown by molecular beam epitaxy
Published 2015“…Two and one orders of reduction in the HLC and VLC were observed, respectively for the GaN buffer doped with the maximum available CBr4 BEP of 1.86× 10-7 mTorr in our system. AlGaN/GaN HEMT heterostructures grown using the carbon doped GaN buffer with 200 nm thick undoped GaN near the channel exhibited good 2DEG characteristics and reduction in the buffer leakage current by two orders of magnitude. …”
Get full text
Thesis -
6305
Fabrication and characterization of Algan/Gan high electron mobility transistors on silicon
Published 2016“…In addition, the fabricated MISHEMTs exhibit excellent ION/IOFF ratio and good sub threshold swing characteristics, which reflects on the good quality of our gate stack approach. Such fabrication method reduces the parasitic inhomogeneities associated with the numerous front-end processing steps and offers more flexibility in device design with limited form factor. …”
Get full text
Thesis