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Fabrication and application of novel highly ordered nano-heterostructure arrays in optoelectronics
Published 2016“…The gentle bombardment of low energy gallium ions removes the defects from ZnO nanorod surfaces. …”
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Thesis -
22
Tin oxide based dye sensitized solar cells
Published 2015“…Despite high Voc and FF were achieved through gallium doping, short circuit current (Jsc) remained relatively low compared to TiO2 based DSSC. …”
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Thesis -
23
Morphology of three polycentric rumen fungi and description of a procedure for the induction of zoosporogenesis and release of zoospores in cultures
Published 1991“…Undifferentiated sporangia were produced by all three isolates; differentiation of the sporangia did not occur in the spent growth media. However, if thalli possessing recently-formed sporangia were transferred to, or flooded with, fresh liquid medium or rumen fluid, zoosporogenesis and liberation of zoospores occurred within 17-20 min for isolates LL and LC2 and 30 min for R. elegans. …”
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24
Transparent conductive thin film
Published 2015“…These thin films are Gallium-doped Zinc Oxide and Aluminium-doped Zinc Oxide. …”
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Final Year Project (FYP) -
25
Design and analysis of passively mode-locked fiber lasers based on saturable absorber for multi-wavelength applications
Published 2017“…By using single-wall carbon nanotube, we experimentally demonstrate a wavelength-switchable harmonic passive mode locked fiber laser with low pumping threshold and a switchable dual-wavelength mode-locked of thulium-doped fiber laser, the properties of our proposed fiber lasers become potential candidate for the molecular spectroscopy, optical communication, and biomedical applications.…”
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Thesis -
26
Design and simulation of mid-infrared laser
Published 2024“…In this project we will be using Gallium Indium Antimonide (GalnSb) as our quantum well material.…”
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Final Year Project (FYP) -
27
1 × N (N = 2, 8) Silicon selector switch for prospective technologies at the 2 μm waveband
Published 2021“…This is due to the promising infrastructural developments at the wavelength region (hollow-core photonic bandgap fiber, thulium-doped fiber amplifier) near 1.9 μm. In this work, we report the 1 × N selector switch based on Mach-Zehnder interferometers operating near the 1.9 μm wavelength region. …”
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Journal Article -
28
Design of a GaN-based power converter
Published 2021“…With the rapid development of gallium nitride (GaN) based system technology, it is now possible to design inverters with better performance than Si-based inverters. …”
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Final Year Project (FYP) -
29
Compact silicon photonic hybrid ring external cavity (SHREC)/InGaSb-AlGaAsSb wavelength-tunable laser diode operating from 1881-1947 nm
Published 2021“…In this work, we present a hybrid silicon photonic wavelength-tunable diode laser with an operating range of 1881-1947 nm (66 nm) for the first time, providing good compatibility with the hollow-core photonic bandgap fiber and thulium-doped fiber amplifier. Room-temperature continuous-wave operation was achieved with a favorable on-chip output power of 28 mW. …”
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Journal Article -
30
基于高掺锗石英光纤的中红外超连续谱产生 = Mid-infrared supercontinuum generation with highly germanium-doped silica fiber
Published 2019“…Mid-infrared supercontinuum generation is demonstrated by using a 75 % germanium-doped silica fiber pumped by a 2 μm Q- switched thulium- doped fiber laser with pulse width of 50 ns. …”
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Impedance and parasitic capacitance analysis of SiC MOSFETs
Published 2020“… [1] Both power MOSFETs and IGBTs are reaching their theoretical limits and suffer from energy losses, prompting the need for some new technologies, namely Gallium-Nitride (GaN) and Silicon-Carbide (SiC) power semiconductors. …”
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Final Year Project (FYP) -
33
Surface modification of oxide capping layers on nickel catalyst for high performance hydrogen applications
Published 2024“…This project aims to develop and study the SDC interlayer thickness for the fabrication of Nickel and Yttria-Stabilised Zirconia (Ni-YSZ) anode onto a Lanthanum Strontium Gallium Magnesium (LSGM) electrolyte base. The purpose is to prevent the formation of La2Zr2O7 and LaNiO3 phases due to Ni-YSZ and LSGM reacting during sintering. …”
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Final Year Project (FYP) -
34
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Room temperature solid-state quantum emitters in the telecom range
Published 2018“…The emission is attributed to localized defects in a gallium nitride (GaN) crystal. The high-performance SPEs embedded in a technologically mature semiconductor are promising for on-chip quantum simulators and practical quantum communication technologies.…”
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Journal Article -
36
Printable superelastic conductors with extreme stretchability and robust cycling endurance enabled by liquid-metal particles
Published 2020“…It is demonstrated that by electrically anchoring conductive fillers with eutectic gallium indium particles (EGaInPs), significant improvement in stretchability and durability can be achieved in stretchable conductors. …”
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Journal Article -
37
Optimizing selenization conditions of Cu2CdSn(S,Se)4
Published 2022“…However, its efficiency is still significantly lower than existing thin film solar cells available in the market like Copper Indium Gallium Selenide (CIGS) and Cadmium Telluride (CdTe). …”
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Final Year Project (FYP) -
38
Power management system design and optimization for European Student Moon Orbitor (ESMO)
Published 2013“…The main source of power for ESMO is the Gallium Arsenide solar array which converts solar energy from the Sun into usable electricity. …”
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Final Year Project (FYP) -
39
Investigating the potential of cobalt-doped zinc oxide (Zn1-xCoxOδ) as a buffer layer for CZTS thin-film solar cells
Published 2024“…Copper zinc tin sulfide (CZTS) solar cells are one of the most promising possible substitutes for chalcopyrite copper indium gallium selenide (CIGS) in the future photovoltaic industry. …”
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Optical properties of ultrathin metal oxide and metal films : effect of free electrons, quantum confinement and localized surface plasmon resonance
Published 2016“…Ultrathin metal oxide thin films including undoped ZnO, Al-doped ZnO (AZO) and amorphous indium gallium zinc oxide (a-IGZO) were deposited using RF magnetron sputtering technique. …”
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Thesis