Functional properties of Yttrium Iron Garnett thin films on graphene-coated Gd3Ga5O12 for remote epitaxial transfer by Leontsev, S., Shah, P.J., Kum, H.S., McChesney, J.L., Rodolakis, F.M., van Veenendaal, M., Velez, M., Rao, R., Haskel, D., Kim, J., Reed, A.N., Page, M.R.

“…YIG is predominantly grown on lattice matched Gadolinium Gallium Garnet (GGG) substrates, but by utilizing the remote epitaxy technique, high quality YIG films can be transferred from GGG onto another substrate such as piezoelectric Lithium Niobate (LN). …”
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Ordered hybrid nanoneedle arrays for gas sensing by Liu, Hai

“…A mechanism of nanoneedle formation is proposed considering the alloying process during incident gallium ion irradiation to the silicon substrate coated with a thin layer of a sufficient low sputter rate. …”
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Colloidal quantum dot light-emitting diode architectures for high performance by Leck, Kheng Swee

“…In addition, in the thesis, we used gallium-doped zinc oxide (GZO) to replace tin-doped indium oxide (ITO) used as the electrode in QD-LEDs due to the increasingly expensive raw materials of ITO. …”
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Development of selenization/sulfurization-free CuIn(S,Se)2 for thin film solar cells applications by Wang, Mengxi

“…Of all the different solar cell technology, copper-indium-gallium sulfide/selenide (CIGS) solar cell is one of the most promising thin film solar cells because of its high optical absorption coefficient, suitable band gap for harvesting a wide range of visible light from the sun as well as some unique electrical and optical properties. …”
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Development of highly efficient organic and perovskite solar cells by Li, Xianqiang

“…So far, the dominant PV technology is based on inorganic semiconductor materials, such as Silicon (Si) and Gallium arsenide (GaAs). Despite the high power conversion efficiency, these PV technologies require strict manufacturing processes and have very high materials and fabrication costs, thus preventing them from being widely accepted. …”
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Fabrication and characterization of Algan/Gan high electron mobility transistors on silicon by Tham, Wai Hoe

“…Among the III-V compounds, Gallium Nitride (GaN) is a promising alternative due to its superior inherent material properties. …”
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