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    Studies on GaN based HEMT heterostructures on 100-mm silicon grown by molecular beam epitaxy

    Studies on GaN based HEMT heterostructures on 100-mm silicon grown by molecular beam epitaxy by Ravikiran Lingaparthi

    Published 2015
    “…Increased relaxation of 2nd GaN with high compressive bow indicates that the stress mitigation from GaN to Si is higher for the heterostructure grown using AlGaN/AlN/GaN SMLs compared to AlN/GaN SMLs. Using cross sectional transmission electron microscope (TEM) analysis, bending and looping of dislocation at AlGaN/2nd AlN and AlGaN/2nd GaN interfaces was attributed to the high relaxation of 2nd GaN. …”
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    Thesis

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