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  1. 881

    Growth of vanadium oxides nanostructures by chemical vapour deposition by Sim, Dao Hao

    Published 2015
    “…The width and thickness of nanosheets are ~100 – 500 nm and 10 – 40 nm, respectively. The growth of the FeVO4 thin film initiates from the oxidation of stainless steel foil forming Fe2O3 on the surface and interacting with the vanadium precursor. …”
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  2. 882
  3. 883

    InAlN/GaN high electron mobility transistors on Si for RF applications by Xing, Weichuan

    Published 2018
    “…Maximum fT of 250 GHz was obtained in a 40-nm gate device, which is the highest among any other GaN HEMTs demonstrated on Si substrate previously. …”
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    Thesis