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11741
InAlN/GaN high electron mobility transistors on Si for RF applications
Published 2018“…The results show that the Planar nanostrip-channel Al2O3/InAlN/GaN MISHEMTs is able to work at up to Vg = +4 V and the linearity performance was further improved. …”
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Thesis -
11742
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11743
WGS.101 Introduction to Women's and Gender Studies, Fall 2014
Published 2024Get full text
Learning Object -
11744
RES.LL-005 D4M: Signal Processing on Databases, Fall 2012
Published 2020Get full text
Learning Object -
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11746
16.90 Computational Methods in Aerospace Engineering, Spring 2014
Published 2022Get full text
Learning Object