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5921
2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure
Published 2021“…A droplet-free and crack-free surface with smooth surface morphology was achieved (RMS roughness ~0.4 nm for 5×5 μm2 AFM scan). The residual compressive stress in the AlN buffer was -1.1 GPa. …”
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Thesis-Doctor of Philosophy -
5922
Novel method of probe design for characterising unclassified microbial taxa in wastewater
Published 2017“…Shimingles; distinct clades were in line with two draft genomes recovered through genomic binning. …”
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Thesis -
5923
InAlN/GaN high electron mobility transistors on Si for RF applications
Published 2018“…Also, device geometries including gate length, line-to-space ratio of the nanostripchannel and gate-to-source distance have been studied. …”
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Thesis