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  1. 5921

    2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure by Patwal, Shashank

    Published 2021
    “…A droplet-free and crack-free surface with smooth surface morphology was achieved (RMS roughness ~0.4 nm for 5×5 μm2 AFM scan). The residual compressive stress in the AlN buffer was -1.1 GPa. …”
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    Thesis-Doctor of Philosophy
  2. 5922

    Novel method of probe design for characterising unclassified microbial taxa in wastewater by Tan, Shi Ming

    Published 2017
    “…Shimingles; distinct clades were in line with two draft genomes recovered through genomic binning. …”
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    Thesis
  3. 5923

    InAlN/GaN high electron mobility transistors on Si for RF applications by Xing, Weichuan

    Published 2018
    “…Also, device geometries including gate length, line-to-space ratio of the nanostripchannel and gate-to-source distance have been studied. …”
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    Thesis