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    Fabrication and characterization of Algan/Gan high electron mobility transistors on silicon

    Fabrication and characterization of Algan/Gan high electron mobility transistors on silicon by Tham, Wai Hoe

    Published 2016
    “…“Moore’s Law” states that the number of transistors in an integrated circuit will double approximately every two years. True to this observation, the number of transistors per Si IC indeed has doubled every 18 months since the 1970s. …”
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    Thesis

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