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Showing 361 - 380 results of 11,150 for search '(((pina OR (spinae OR ((spinn OR spin) OR spingn))) OR five) OR ((shin OR thin) OR (pin OR long)))', query time: 0.26s Refine Results
  1. 361
  2. 362

    Indications of surface-dominated transport in single crystalline nanoflake devices of topological insulator Bi_{1.5}Sb_{0.5}Te_{1.8}Se_{1.2} by Xia, Bin, Ren, Peng, Sulaev, Azat, Liu, Peng, Shen, Shun-Qing, Wang, Lan

    Published 2013
    “…We report experimental evidence of surface-dominated transport in single crystalline nanoflake devices of topological insulator Bi1.5Sb0.5Te1.8Se1.2 (BSTS). The resistivity measurements show dramatic differences between the nanoflake devices and bulk single crystal. …”
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    Journal Article
  3. 363
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    Noble metal alloy thin films by atomic layer deposition and rapid Joule heating by Guo, Yuanyuan, Zou, Yiming, Cheng, Chunyu, Wang, Leyan, Made, Riko I., Goei, Ronn, Tan, Kwan Wee, Li, Shuzhou, Tok, Alfred Iing Yoong

    Published 2022
    “…This manuscript details a new method of fabricating Rhodium-Iridium (Rh-Ir) metal alloy films using atomic layer deposition (ALD) and rapid Joule heating induced alloying that gives functional thin film alloys, enabling conformal thin films with high aspect ratios on 3D nanostructured substrate. …”
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    Journal Article
  9. 369

    Profile of optical constants of SiO2 thin films containing Si nanocrystals by Dong, Gui, Chen, Tupei, Liu, Yang, Tse, Man Siu, Fung, Stevenson Hon Yuen

    Published 2010
    “…For optoelectronic and photonic applications of Si nanocrystals (nc-Si) embedded in a SiO2 matrix, the information of the depth profiles of the optical constants for the thin film system is necessary. In this work, an approach of the depth profiling for the thin film synthesized with ion implantation is developed. …”
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    Journal Article
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    Characterization of negative bias temperature instability in ultra-thin oxynitride gate P-MOSFETs by Wang, Shuang

    Published 2009
    “…Contrary to the single activation energy of the conventional SiO2 gate p-MOSFET, two distinct activation energies were obtained on ultra-thin oxynitride gate p-MOSFETs. One of the activation energy coincides with that obtained from the R-D model on SiO2 gate p-MOSFET; while the other activation energy is much smaller, representing a thermally-insensitive mechanism. …”
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    Thesis
  15. 375

    Optical properties of aluminum-doped zinc oxide thin films for solar cell application by Heng, Shu Wei.

    Published 2009
    “…In the current project, effect of different deposition parameters on the optical properties of aluminum-doped zinc oxide thin films was investigated. The AZO thin films were prepared onto glass substrate under different deposition conditions by magnetron sputtering. …”
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    Final Year Project (FYP)
  16. 376

    Ferroelastic strain induced antiferroelectric-ferroelectric phase transformation in multilayer thin film structures by Mirshekarloo, Meysam Sharifzadeh, Yao, Kui, Sritharan, Thirumany

    Published 2013
    “…Coupling effects among mechanical, electrical and magnetic parameters in thin film structures including ferroic thin films provide exciting opportunity for creating device functionalities. …”
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    Journal Article
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  20. 380

    Measuring spin polarization of Cu-doped bulk indium tin oxide using point contact Andreev reflection method. by Tan, Lihao.

    Published 2009
    “…Spin polarization of a novel material is of interest to researcher in the field of spintronic devices. …”
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    Final Year Project (FYP)