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1221

Experimental and simulation study on the effect of geometrical and flow parameters for combined-hole film cooling by Hassan, Haswira

Published 2016

“…In the present study, a batch of simulations and experiments involving two cylindrical holes with opposite compound angle were carried out and this two cylindrical hole also known as combined-hole film cooling. The main objective of this study is to determine the influence of different blowing ratio, M with a combination of different lateral distance between cooling holes (PoD), a streamwise distance between cooling holes (LoD) and compound angle of cooling hole (1/2) on the film cooling performance. …”

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Thesis

1222

A comparative study on wear and corrosion behaviour of tungsten carbide-nickel (Wc-Ni) and tungsten carbide-cobalt (Wc-Co) high velocity oxy-fuel (HVOF) for carbon steel blade by Ahmad, Noor Aqilah

Published 2017

“…HVOF is one of the process of depositing a material layer over a base metal or substrate with characteristics of high flame velocity and moderate temperature. The main purpose of this present study is to characterize the structure of the tungsten carbide 10 wt.% nickel (WC-10Ni) and tungsten carbide 12 wt.% w cobalt (WC-12Co) coating deposited by means of HVOF thermal spray onto a continuous digester (CD) blade that made up from carbon steel. …”

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Thesis

1223

Optimization of extraction conditions of phytochemical compounds and anti-gout activity of euphorbia hirta l. (Ara Tanah) using response surface methodology and Liquid Chromatogr... by Abu Bakar, Fazleen Izzany, Abu Bakar, Mohd Fadzelly, Abdullah, Norazlin, Endrini, Susi, Fatmawati, Sri

Published 2019

“…/e optimum values for total flavonoid, total phenolic, and xanthine oxidase inhibitory activity were 67.56 mg RE/g, 155.21 mg GAE/g, and 91.42%, respectively. /e main phytochemical compounds in the optimized E. hirta extract are neochlorogenic acid, quercetin-3β-D-glucoside, syringic acid, caffeic acid, ellagic acid, astragalin, afzelin, and quercetin. …”

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Article

1224

Aluminium nitride (AlN) as buffer layer for deposition of gallium nitride (GaN) thin films on silicon substrates using magnetron sputtering technique by Tahan, Muliana

Published 2021

“…Group III-nitrides semiconductors composed of gallium nitride (GaN), Indium nitride (InN), and aluminium nitride (AlN) had found use in broad technologies especially in optoelectronic and power devices. The main issues that limit the performance of GaN-based ultraviolet light-emitting diodes (UV-LEDs) are difficult to achieve highly crystalline GaN because lack of suitable substrates available and needed for high-temperature deposition process. …”

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Thesis

1225