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    Determining the location of localized defect in the perpendicular junction configuration with the use of electron beam induced current by Phua, Poh Chin., Ong, Vincent K. S.

    Published 2009
    “…This paper describes a new method of determining the location of a localized defect in semiconductor materials using the perpendicular p–n junction configuration. The scanning electron microscope (SEM) operating in the charge-collection, or the electron beam induced current (EBIC) mode, is used for this. …”
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    Journal Article
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