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    Point defect–dislocation interactions in BEOL-compatible Ge-on-Si epitaxy by Postelnicu, Eveline, Wen, Rui-Tao, Ma, Danhao, Wang, Baoming, Wada, Kazumi, Michel, Jurgen, Kimerling, Lionel C

    Published 2024
    “…Reduced thermal budget is required for back-end-of-line (BEOL) integration of application specific functionality into the multilevel metal stack of a processor “substrate.” …”
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    Article
  20. 2180

    A thermal resilient integration of many-core microprocessors and main memory by 2.5D TSI I/Os by Wu, Sih-Sian, Wang, Kanwen, Manoj P. D, Sai, Ho, Tsung-Yi, Yu, Mingbin, Yu, Hao

    Published 2015
    “…On the other hand, the one by 2.5D transmission-line-interconnected TSI I/Os has shown almost the same energy efficiency and better thermal resilience.…”
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    Conference Paper