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    Ohmic contact formation to β-Ga2O3 nanosheet transistors with Ar-containing plasma treatment by Chen, Jinxin, Liu, Bingyan, Gu, Yang, Li, Bin

    Published 2024
    “…With the optimal plasma pre-treatment (i.e., Ar plasma, 100 W, 60 s), the resulting β-Ga2O3 nanosheet field-effect transistors (FETs) show effective Ohmic contact (i.e., contact resistance RC of 104 Ω·mm) without any post-annealing, which leads to competitive device performance such as a high current on/off ratio (>107), a low subthreshold swing (SS, 249 mV/dec), and acceptable field-effect mobility ((Formula presented.), ~21.73 cm2 V−1 s−1). …”
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    Journal Article
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