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    2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure by Patwal, Shashank

    Published 2021
    “…A droplet-free and crack-free surface with smooth surface morphology was achieved (RMS roughness ~0.4 nm for 5×5 μm2 AFM scan). The residual compressive stress in the AlN buffer was -1.1 GPa. …”
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    Thesis-Doctor of Philosophy
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