InAlN/GaN high electron mobility transistors on Si for RF applications by Xing, Weichuan

“…Also, device geometries including gate length, line-to-space ratio of the nanostripchannel and gate-to-source distance have been studied. …”
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Multi-site benchmark classification of major depressive disorder using machine learning on cortical and subcortical measures by Belov, Vladimir, Erwin-Grabner, Tracy, Aghajani, Moji, Aleman, Andre, Amod, Alyssa R., Basgoze, Zeynep, Benedetti, Francesco, Besteher, Bianca, Bülow, Robin, Ching, Christopher R. K., Connolly, Colm G., Cullen, Kathryn, Davey, Christopher G., Dima, Danai, Dols, Annemiek, Evans, Jennifer W., Fu, Cynthia H. Y., Gonul, Ali Saffet, Gotlib, Ian H., Grabe, Hans J., Groenewold, Nynke, Hamilton, J. Paul, Harrison, Ben J., Ho, Tiffany C., Mwangi, Benson, Jaworska, Natalia, Jahanshad, Neda, Klimes-Dougan, Bonnie, Koopowitz, Sheri-Michelle, Lancaster, Thomas, Li, Meng, Linden, David E. J., MacMaster, Frank P., Mehler, David M. A., Melloni, Elisa, Mueller, Bryon A., Ojha, Amar, Oudega, Mardien L., Penninx, Brenda W. J. H., Poletti, Sara, Pomarol-Clotet, Edith, Portella, Maria J., Pozzi, Elena, Reneman, Liesbeth, Sacchet, Matthew D., Sämann, Philipp G., Schrantee, Anouk, Sim, Kang, Soares, Jair C., Stein, Dan J., Thomopoulos, Sophia I., Uyar-Demir, Aslihan, van der Wee, Nic J. A., van der Werff, Steven J. A., Völzke, Henry, Whittle, Sarah, Wittfeld, Katharina, Wright, Margaret J., Wu, Mon-Ju, Yang, Tony T., Zarate, Carlos, Veltman, Dick J., Schmaal, Lianne, Thompson, Paul M., Goya-Maldonado, Roberto

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