2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure by Patwal, Shashank

“…The high current in the AlGaN/GaN HEMTs is driven through the narrow (~10 nm) 2DEG channel causing significantly high self-heating in this region, resulting in negative output conductance and decrease in carrier mobility. …”
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50 Years of quantum chromodynamics by Gross, Franz, Klempt, Eberhard, Brodsky, Stanley J., Buras, Andrzej J., Burkert, Volker D., Heinrich, Gudrun, Jakobs, Karl, Meyer, Curtis A., Orginos, Kostas, Strickland, Michael, Stachel, Johanna, Zanderighi, Giulia, Brambilla, Nora, Braun-Munzinger, Peter, Britzger, Daniel, Capstick, Simon, Cohen, Tom, Crede, Volker, Constantinou, Martha, Davies, Christine, Del Debbio, Luigi, Denig, Achim, DeTar, Carleton, Deur, Alexandre, Dokshitzer, Yuri, Dosch, Hans Günter, Dudek, Jozef, Dunford, Monica, Epelbaum, Evgeny, Escobedo, Miguel A., Fritzsch, Harald, Fukushima, Kenji, Gambino, Paolo, Gillberg, Dag, Gottlieb, Steven, Grafstrom, Per, Grazzini, Massimiliano, Grube, Boris, Guskov, Alexey, Iijima, Toru, Ji, Xiangdong, Karsch, Frithjof, Kluth, Stefan, Kogut, John B., Krauss, Frank, Kumano, Shunzo, Leinweber, Derek, Leutwyler, Heinrich, Li, Hai-Bo, Li, Yang, Malaescu, Bogdan, Mariotti, Chiara, Maris, Pieter, Marzani, Simone, Melnitchouk, Wally, Messchendorp, Johan, Meyer, Harvey, Mitchell, Ryan Edward, Mondal, Chandan, Nerling, Frank, Neubert, Sebastian, Pappagallo, Marco, Pastore, Saori, Peláez, José R., Puckett, Andrew, Qiu, Jianwei, Rabbertz, Klaus, Ramos, Alberto, Rossi, Patrizia, Rustamov, Anar, Schäfer, Andreas, Scherer, Stefan, Schindler, Matthias, Schramm, Steven, Shifman, Mikhail, Shuryak, Edward, Sjöstrand, Torbjörn, Sterman, George, Stewart, Iain W., Stroth, Joachim, Swanson, Eric, de Téramond, Guy F., Thoma, Ulrike, Vairo, Antonio, van Dyk, Danny, Vary, James, Virto, Javier, Vos, Marcel, Weiss, Christian, Wobisch, Markus, Wu, Sau Lan, Young, Christopher, Yuan, Feng, Zhao, Xingbo, Zhou, Xiaorong

“…QCD cannot be solved analytically, at least not yet, and the large value of $$\alpha _s$$ α s at low momentum transfers limits perturbative calculations to the high-energy region where $$Q^2\gg \varLambda _{{\textrm{QCD}}} ^2\simeq $$ Q 2 ≫ Λ QCD 2 ≃ (250 MeV) $$^2$$ 2 . …”
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Fabrication and characterization of Algan/Gan high electron mobility transistors on silicon by Tham, Wai Hoe

“…Therefore, another important objective of this report is to investigate the effect of Germanium diffusion on shifting the threshold voltage of AlGaN/GaN HEMT at the gate region. Si and Ge are generally used as n-type dopants in AlGaN/GaN epilayers. …”
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