Showing 241 - 260 results of 1,717 for search '(((spina OR (pingao OR ((shine OR shane) OR shin))) OR line) OR (spingn OR pin))', query time: 0.17s Refine Results
  1. 241

    A review of extraction methods for the analysis of pharmaceuticals in environmental waters by Daniels, Kevin D., Park, Minkyu, Huang, Zhenzhen, Jia, Ai, Flores, Guillermo S., Lee, Hian Kee, Snyder, Shane Allen

    Published 2022
    “…Additionally, miniaturized and on-line extraction procedures have also attracted a lot of attention. …”
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    Journal Article
  2. 242

    Distributed local linear parameter estimation using gaussian SPAWN by Leng, Mei, Tay, Wee Peng, Quek, Tony Q. S., Shin, Hyundong

    Published 2019
    “…We show that gSPAWN converges in mean and has mean-square stability under some technical sufficient conditions, and we describe an application of gSPAWN to a network localization problem in non-line-of-sight environments. Numerical results suggest that gSPAWN converges much faster in general than the diffusion method, and has lower communication costs per sensor, with comparable root-mean-square errors.…”
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    Journal Article
  3. 243

    15.818 Pricing, Spring 2005 by Tucker, Catherine

    Published 2005
    Subjects:
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    Learning Object
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  15. 255

    Synthesis and structure of two-dimensional transition-metal dichalcogenides by Shi, Yumeng, Zhang, Hua, Chang, Wen-Hao, Shin, Hyeon Suk, Li, Lain-Jong

    Published 2018
    “…In this article, we review recent developments in the synthesis of TMDC monolayers, alloys, and heterostructures, which shine light on the design of novel TMDCs with desired functional properties.…”
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    Journal Article
  16. 256

    Producing microscale Ge textures via titanium nitride- and nickel-assisted chemical etching with CMOS-compatibiliyty by Liao, Yikai, Shin, Sang-Ho, Jin, Yuhao, Wang, Qi Jie, Kim, Munho

    Published 2022
    “…Schottky contact barrier of metal catalyst with Ge is also investigated indicating similar hole injection efficiency among TiN, Ni, and Ti/Ni with Ge junction due to strong Fermi level pinning effect. The TiN- and Ni-assisted chemical etching of Ge shed light on CMOS-compatible Ge-based photonic and optoelectronic applications.…”
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    Journal Article
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