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    A SnO2 nanoparticle/nanobelt and Si heterojunction light-emitting diode by Chen, Rui, Sun, Handong, Dong, Zhili, Ling, Bo, Sun, Xiaowei, Zhao, Jun Liang, Ke, Chang, Tan, Swee Tiam

    Published 2011
    “…The different emission performance between nanoparticle and nanobelts devices was attributed to the larger surface-to-volume ratio of the nanobelts, which was confirmed by the Raman and photoluminescence analysis. A thin SiO2 intermediate layer was found to be crucial in achieving light emission from a n-SnO2/p-Si heterojunction with large valence band offset (ca. 2.96 eV), by which sufficient potential-energy difference can be maintained between SnO2 and Si, thus facilitating the tunneling injection of holes.…”
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    Journal Article
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