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2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure
Published 2021“…A droplet-free and crack-free surface with smooth surface morphology was achieved (RMS roughness ~0.4 nm for 5×5 μm2 AFM scan). The residual compressive stress in the AlN buffer was -1.1 GPa. …”
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Thesis-Doctor of Philosophy -
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