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    InAlN/GaN high electron mobility transistors on Si for RF applications

    InAlN/GaN high electron mobility transistors on Si for RF applications by Xing, Weichuan

    Published 2018
    “…In fact, as the operating frequency increases into the mm-wave range by shrinking the gate length, the linearity is expected to degrade even further. This thesis mainly focuses on these two issues. Novel approaches are employed to resolve them and much improved device performance were obtained. …”
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    Thesis

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