Electrical and optoelectronic studies of semiconductor nanostructures by Wong, Jen It.

“…With this approach, the nc-Si depth profile in the gate oxide can be precisely controlled without the need of growing an ultra-thin tunnel oxide. Thirdly, a quasi-graded refractive index (n) anti-reflection coating (ARC) layer was fabricated in one step using conventional plasma enhanced chemical vapor deposition (PECVD) equipment. …”
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A SnO2 nanoparticle/nanobelt and Si heterojunction light-emitting diode by Chen, Rui, Sun, Handong, Dong, Zhili, Ling, Bo, Sun, Xiaowei, Zhao, Jun Liang, Ke, Chang, Tan, Swee Tiam

“…Both geometrically different nanostructures were further employed to fabricate the light-emitting diodes and showed dominant red and green emission bands at room temperature, which were ascribed to the deep defect states in SnO2. …”
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Towards electrically injected colloidal semiconductor lasers by Thung, Yi Tian

“…The fabricated microlasers exhibited stable lasing at room temperature with a record-breaking quality (Q-) factor of 13000, a low lasing threshold of 27.67 μJ cm-2, and stable single-mode lasing with a Q-factor of 7340 via evanescent field coupling between an NPL-coated microsphere and a thin uncoated microfiber in a 2D-3D microcavity configuration. …”
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