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    Efficient generation of an array of single silicon-vacancy defects in silicon carbide by Wang, Junfeng, Zhou, Yu, Zhang, Xiaoming, Liu, Fucai, Li, Yan, Li, Ke, Liu, Zheng, Wang, Guanzhong, Gao, Weibo

    Published 2018
    “…Color centers in silicon carbide have increasingly attracted attention in recent years owing to their excellent properties such as single-photon emission, good photostability, and long spin-coherence time even at room temperature. As compared to diamond, which is widely used for hosting nitrogen-vacancy centers, silicon carbide has an advantage in terms of large-scale, high-quality, and low-cost growth, as well as an advanced fabrication technique in optoelectronics, leading to prospects for large-scale quantum engineering. …”
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    Journal Article
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