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    Room-temperature fabricated thin-film transistors based on compounds with lanthanum and main family element boron by Xiao, Peng, Huang, Junhua, Dong, Ting, Xie, Jianing, Yuan, Jian, Luo, Dongxiang, Liu, Baiquan

    Published 2018
    “…LaBx-TFT without any intentionally annealing steps exhibited a saturation mobility of 0.44 cm2·V−1·s−1, which is a subthreshold swing (SS) of 0.26 V/decade and a Ion/Ioff ratio larger than 104. …”
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    Journal Article
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