Electrical tunable topological valley photonic crystals for on-chip optical communications in the telecom band by Qi, Zhipeng, Hu, Guohua, Deng, Chunyu, Sun, Hao, Sun, Yaohui, Li, Ying, Liu, Bo, Bai, Yu, Chen, Shuaidong, Cui, Yiping

“…On-chip optical communications are in increasingly demand for low-loss, small-footprint and power-efficient waveguiding solutions in the telecom band. However, most integrated optical circuits suffer from high propagation loss and low integration degree. …”
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Programmable interfacial band configuration in WS2/Bi2O2Se heterojunctions by Zhang, Hanwen, Fu, Jianhui, Carvalho, Alexandra, Poh, Eng Tuan, Chung, Jing-Yang, Feng, Minjun, Chen, Yinzhu, Wang, Bo, Shang, Qiuyu, Yang, Hengxing, Zhang, Zheng, Lim, Sharon Xiaodai, Gao, Weibo, Gradečak, Silvija, Qiu, Cheng-Wei, Lu, Junpeng, He, Chunnian, Sum, Tze Chien, Sow, Chorng Haur

“…A crucial factor determining the light-material interaction is in the band alignment at the heterojunction interface, particularly the distinctions between type-I and type-II alignments. …”
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Plasmonic semiconductor nanogroove array enhanced broad spectral band millimetre and terahertz wave detection by Tong, Jinchao, Suo, Fei, Zhang, Tianning, Huang, Zhiming, Chu, Junhao, Zhang, Dao Hua

“…In addition, such a single device can perform broad spectral band detection from 0.9 mm (0.330 THz) to 9.4 mm (0.032 THz). …”
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Bond order resolved 3d 5/2 and valence band chemical shifts of Ag surfaces and nanoclusters by Sun, Changqing, Qin, Wei, Wang, Yan, Huang, Yongli, Zhou, Zhaofeng, Yang, Chao

“…Theoretical reproduction of the measured spectroscopic data derived that the 3d5/2 energy of an isolated Ag atom shifts from 363.02 to 367.65 eV and the valence band center from 0.36 to 8.32 eV upon bulk formation. …”
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Developing a system that uses ultrawide-band inertial measurement units to quantify selected 10-Pin skills in real-time by Wee, Joel Jiewei

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Quantum scale biomimicry of low dimensional growth : an unusual complex amorphous precursor route to TiO2 band confinement by shape adaptive biopolymer-like flexibility for energy... by Choi, Dahyun, Sonkaria, Sanjiv, Fox, Stephen John, Poudel, Shivraj, Kim, Sung-yong, Kang, Suhee, Kim, Seheon, Verma, Chandra, Ahn, Sung Hoon, Lee, Caroline Sunyong, Khare, Varsha

“…Further, we show the change in optoelectronic properties under quantum confinement is intrinsically related to size that affects their optical absorption band energy range in DSSC.…”
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Interface energetics and dynamics in organic-inorganic hybrid perovskites by Goh, Teck Wee

“…This thesis is dedicated to address these issues. Firstly, the interface energetics of FAPbI3-based perovskites with organic charge extraction layers showed apparent upward band bending, but its origin is unexpectedly due to presence of δ-FAPbI3. …”
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Multi-class classification of EEG in a brain-computer interface by Chong, Cherrie Ning Hui

“…For binary classification of up v.s. left, the delta and theta bands comprised a larger proportion of best features selected, and similarly with the alpha band for classification of up v.s. right.…”
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Two-dimensional transitional metal dichalcongenide heterostructures : interface optical properties by Zheng, ShouJun

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Improving the charge separation and collection at the buffer/absorber interface by double-layered Mn-substituted CZTS by Lie, Stener, Sandi, Mario Indra, Tay, Ying Fan, Li, Wenjie, Tan, Joel Ming Rui, Bishop, Douglas M., Gunawan, Oki, Wong, Lydia Helena

“…An absorber gradient using partial cation-substitution is one possible solution to this issue by reducing interface recombination sites and improving band alignment. …”
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Self assembled monolayers (SAMs) passivation at TiO2/electrolyte interface in dye sensitized solar cell (DSSC) by Tan, Shi Ying.

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EEG based brain signal analysis on stress level by Ng, Yu Xin

“…In this fast pace world, one must complete multiple jobs at the same time. …”
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Study of impact properties of materials by instrumented impact testing by Zheng, Qi.

“…Delaminations occurred along rolling bands during the instrumented impact tests at -77°C and -196°C on sub-sized Charpy specimens extracted from a mixing chamber made of austenitic stainless steel. …”
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ZrO2 as high-K gate dielectric for GaN-based transistors by Ye, Gang

“…Valence band discontinuity ΔEV of 1 eV and conduction band discontinuity ΔEC of 1.2 eV at ZrO2/GaN interface were determined. (2) The interface states related to the interfacial sub-oxide layer between ALD-ZrO2 and (Al)GaN were affected by various fabrication processing treatments. …”
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Optical and optoelectronic properties of Si nanocrystals embedded in dielectric matrix by Ding, Liang

“…However, the size-dependent PL could not originate from the direct band to band transition of nc-Si. Based on the knowledge of band structure of nc-Si obtained in this work, the size-dependent PL band could be attributed to the indirect band-to-band transition of the nc-Si assisted by the Si-O vibration at the interface of nc-Si/SiO2. …”
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Human-Computer Interaction : Interaction Techniques and Novel Applications : Thematic Area, HCI 2021, Held as Part of the 23rd HCI International Conference, HCII 2021, Virtual Even... by International Conference on Human-Computer Interaction (23rd : 2021 : Online) 642922, Kurosu, Masaaki, 1948-, editor 573627

Data mining applications in Singapore by Ang, Chung Lay, Loh, Heng Meng, Tham, Tuck Kong

“…With the ever increasing pace oftechnological advancement, data acquisition has become amazingly easy and painless. …”
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Experimental investigation and crystal plasticity modelling of dynamic recrystallisation in dual-phase high entropy alloy during hot deformation by Zhou, Z, Huo, Y, Wang, Z, Demir, E, Jiang, A, Yan, Z, He, T

“…In the initial stage of deformation, stress concentrates at the grain boundaries and interface boundary and then propagate to the deformation bands with temperature. …”

Nanostructuring confinement for controllable interfacial charge transfer by Qiao, Wei, Tao, Hua Bing, Liu, Bin, Chen, Jiazang

“…Transfer of charge carriers through the carbon-semiconductor interface is the key electronic process, which determines the role of charge separation channels, and is sensitively influenced by band structures of the semiconductor near the contacts. …”
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Towards in-network machine learning on programmable network devices by Zheng, C

“…In-network computing is a promising and scalable solution, capable of processing packets in-band at the pace of data generation and facilitating early termination of traffic. …”