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    High performance germanium on silicon photodiodes for back-end-of-line photonic integration by Marzen, S, Postelnicu, E, Michel, J, Wada, K, Kimerling, LC

    Published 2024
    “…Integration of near-infrared photodetectors in the back-end-of-line requires low temperature growth of Ge (<450 °C). …”
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    Article
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