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  1. 1101
  2. 1102

    The relations between Van Der Waals and covalent forces in layered crystals by Chaturvedi, Apoorva

    Published 2017
    “…Further its FET has an on/off ratio of 105 and mobility of 18 and 40 cm2V-1s-1 at room and low temperature respectively. …”
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    Thesis
  3. 1103

    Injectable and biomimetic poly (ethylene glycol) hydrogel systems for in situ therapeutic cell delivery by Cao, Ye

    Published 2017
    “…Therefore, this gelatin-PEG hydrogel system with tunable mechanical properties (storage modulus: 40~2000Pa) can support cell attachment, growth and help to rebuild a new ECM in 3-D microenvironments. …”
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    Thesis
  4. 1104

    Purification of miraculin from miracle fruit [Synsepalum dulcifium (Schumach. & Thonn.) Daniell] by He, Zuxing

    Published 2015
    “…Study found that vitamin C content (40.1 mg/100 g FW) and total phenolic content (625.57 mg GAE/100 g FW) in miracle fruit flesh are very high and they together contribute to the high antioxidant activity of miracle fruit. …”
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    Thesis
  5. 1105

    Growth of vanadium oxides nanostructures by chemical vapour deposition by Sim, Dao Hao

    Published 2015
    “…The width and thickness of nanosheets are ~100 – 500 nm and 10 – 40 nm, respectively. The growth of the FeVO4 thin film initiates from the oxidation of stainless steel foil forming Fe2O3 on the surface and interacting with the vanadium precursor. …”
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    Thesis
  6. 1106
  7. 1107

    Therapeutic effects of Cosmos caudatus kunth leaf extract in the prevention and treament of obesity in sprague dawley rats by Abdul Rahman, Hafeedza

    Published 2015
    “…Preliminary study was carried out to investigate the anti-obesity and antioxidant activity of 8 common herbs, namely Cosmos caudatus, Pluchea indica, Lawsonia inermis, Carica papaya, Piper betle, Andrographis paniculata, Pereskia bleo and Melicope lunu. …”
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    Thesis
  8. 1108
  9. 1109
  10. 1110

    InAlN/GaN high electron mobility transistors on Si for RF applications by Xing, Weichuan

    Published 2018
    “…Maximum fT of 250 GHz was obtained in a 40-nm gate device, which is the highest among any other GaN HEMTs demonstrated on Si substrate previously. …”
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    Thesis