Distribution and cycling of terrigenous dissolved organic carbon in peatland-draining rivers and coastal waters of Sarawak, Borneo by Martin, Patrick, Cherukuru, Nagur, Tan, Ashleen S. Y., Sanwlani, Nivedita, Mujahid, Aazani, Müller, Moritz

“…We present the first ever seasonally resolved measurements of DOC concentration and chromophoric dissolved organic matter (CDOM) spectra for six peatland-draining rivers and coastal waters in Sarawak, north-western Borneo. …”
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Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices by Qian, Haisheng, Hu, Guangxi, Hu, Laigui, Zhou, Xing, Liu, Ran, Zheng, Lirong

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Gate-all-around nanowire FET sensors with ultrahigh sensitivity and low noise by Pushpapraj Singh

“…To further improve the piezoresistive sensitivity, the gate-all-around (GAA) nanowire field-effect transistor (NWFET) was presented as a novel, miniaturized and lower voltage driven piezoresistive sensing element. …”
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Nickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channels by Tang, L. J., Ho, C. K. F., Tan, Eu Jin, Pey, Kin Leong, Singh, Navab, Lo, Guo-Qiang, Chi, Dong Zhi, Chin, Yoke King, Lee, Pooi See

“…We demonstrate high-performance Schottky CMOS transistors with NiSi source/drain and gate-all-around (GAA) silicon nanowire (~5 nm) channels. …”
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Land reclamation - from conventional vertical drain methods to a combined vacuum preloading and electro-osmosis with horizontal drainage enhanced geotextile sheets by Wong, Lung Anthony

“…The major challenges include the extra time required for consolidating the clay slurry and the formation of a working platform for construction, which are not necessary if sandy fill material is adopted. Consolidation analysis of drained reclamation work is a key aspect in assessing the performance of the ground improvement work conducted. …”
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Batch versus continuous feeding strategies for pharmaceutical removal by subsurface flow constructed wetland by Gersberg, Richard M., Jinadasa, K. B. S. N., Zhang, Dong Qing, Zhu, Junfei, Hua, Tao, Tan, Soon Keat

“…Except for carbamazepine, clofibric acid and naproxen, removal in CWs was significantly (p < 0.05) enhanced under the batch versus continuous mode. For all compounds tested except naproxen, values for first-order decay constants (k) for drain and fill operation were higher than that for the continuous mode of operation. …”
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Low frequency noise measurement in the MOS transistor by Thet, Kyaw Win.

“…The width of all the devices tested is 10um while different channel lengths of the range 0.12 – 0.5 um are measured experimentally.…”
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Multi-trap energy states in GaN HEMTs : characterization and modeling by Binit Syamal, Zhou, Xing, Chiah, Siau Ben

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Analysis of high power gallium nitride based high electron mobility transistors for next generation electronics applications by Vompolu, Ganesh Sampath

“…Simulation results of lattice temperature profiles have confirmed the existence of a hotspot at the gate edge of gate-drain region. The junction temperature was determined from the lattice temperature profiles. …”
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Fabrication of biodegradable and flexible transistor arrays by Cai, Yu Chao

“…In this project, the author uses the biopolymer, knows as Lignin, from the woody plant as gate insulator layer of the organic thin film transistors (OTFTs). The Lignin polymer showed good performance for the transient property and flexibility. …”
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Directional emission from electrically injected exciton-polaritons in perovskite metasurfaces by Wang, Yutao, Tian, Jingyi, Klein, Maciej, Adamo, Giorgio, Ha, Son Tung, Soci, Cesare

“…Here a high-finesse metasurface cavity is monolithically patterned in the channel of a perovskite light-emitting transistor to induce a large Rabi splitting of ∼200 meV and more than 50-fold enhancement of the polaritonic emission compared to the intrinsic excitonic emission of the perovskite film. Moreover, the directionality of polaritonic electroluminescence can be dynamically tuned by varying the source-drain bias, which induces an asymmetric distribution of exciton population within the transistor channel. …”
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Synaptic plasticity in VLSI : a floating-gate approach by Gopalakrishnan, Roshan

“…The spike triplet affects the setting of drain voltage–we present a single pulse and a double pulse drain voltage method to obtain the desired dependence of weight on spike timing. …”
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Hydrogen-bond memory and water-skin supersolidity resolving the Mpemba paradox by Zhang, Xi, Huang, Yongli, Ma, Zengsheng, Zhou, Yichun, Zhou, Ji, Zheng, Weitao, Jiang, Qing, Sun, Changqing

“…Being sensitive to the source volume, skin radiation, and the drain temperature, the Mpemba effect proceeds only in the strictly non-adiabatic ‘source–path–drain’ cycling system for the heat “emission–conduction–dissipation” dynamics with a relaxation time that drops exponentially with the rise of the initial temperature of the liquid source.…”
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Schottky barrier engineering on dopant-segregated schottky silicon nanowire MOSFETs by Chin, Yoke King

“…Silicon nanowire with Gate-All-Around architecture is considered as one of the most promising candidates for CMOS scaling beyond 11 nm technology node due to its superior gate to channel electrostatic control. …”
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3.3–4.3 GHz efficient continuous class-F gallium nitride power amplifier based on simplified real frequency technique and harmonic tuning by Sadeque, Golam, Yusoff, Zubaida, Roslee, Mardeni, Hashim, Shaiful Jahari, Mohd Marzuki, Azah Syafiah, Lees, Jonathan, Zubir, Farid, Al-Bawri, Samir Salem

“…According to experimental findings, the measured drain efficiency (DE) throughout the whole bandwidth ranged from 57.5 to 67.5% at the output power of 40 dBm. …”
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Role of ex-situ HfO2 passivation to improve device performance and suppress X-ray-induced degradation characteristics of in-situ Si3N4/AlN/GaN MIS-HEMTs by Dalapati, Pradip, Li, Hanchao, Arulkumaran, Subramaniam, Ng, Geok Ing

“…Furthermore, due to the generation of chemical vacancies under X-ray, a band tail near the edge of valence band maximum in Si3N4 and HfO2 films can be created. The obtained results suggest that MIS-HEMT fabricated with an atomic layer deposited (ALD)-HfO2 (MIS-HEMT B) has relatively greater performance compared to MIS-HEMT fabricated without ex-situ HfO2 (MIS-HEMT A) according to the higher maximum drain current (Idmax), peak transconductance (gmmax) and lower current collapse, denoting the effectiveness of ALD-HfO2 to passivate the surface traps. …”
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Finite element analysis of a free-standing concrete sea-wall as alternative to traditional land reclamation by Harris, Raymond

“…Now with the increasing cost of sand fill materials due to scarcity, the conventional method of land reclamation is becoming less feasible. …”
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Design of RF front-end circuit blocks for low-power applications by Lim, Kok Meng

“…This report aims to provide a comprehensive review as well as the design of the various high frequency circuits found in almost all the transceivers in the market today. Wireless communication has become a natural part of everyone’s life, its presence can be seen all around. …”
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A CMOS ISFET interface circuit with dynamic current temperature compensation technique by Chan, Pak Kwong, Chen, D. Y.

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A CMOS analog front-end IC for portable EEG/ECG monitoring applications by Ng, K. A., Chan, Pak Kwong

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