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    2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure

    2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure by Patwal, Shashank

    Published 2021
    “…The two-dimensional electron gas (2DEG) at the AlGaN/GaN heterointerface can be achieved without doping owing to their polarization properties. Despite their promising device performances for high power and high-frequency applications, they are limited by issues such as self-heating, buffer leakage and reliability. …”
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    Thesis-Doctor of Philosophy

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