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    Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance by Zhao, P., Yang, X. H., Ng, Chi Yung, Chen, Tupei, Ding, Liang, Yang, Ming, Wong, Jen It, Tse, Man Siu, Trigg, Alastair David, Fung, Stevenson Hon Yuen

    Published 2010
    “…The nc-Si is synthesized by Si-ion implantation. The effective dielectric constant of the gate oxide in the nc-Si distributed region is calculated based on a sublayer model of the nc-Si distribution and the Maxwell-Garnett effective medium approximation. …”
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    Journal Article
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