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    Surface integrity and removal rate of silicon sputtered with focused ion beam by Hung, NguyenPhu, Ali, Mohammad Yeakub, Fu, Yongqi, Ong, NanShing, Tay, MengLeong

    Published 2001
    “…Effect of the beam parameters (dose, aperture and accelerating voltage) and the beam scanning parameters (pixel spacing, dwell time, retracing time and scanning type) on the surface integrity and material removal rate were studied. …”
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    Article
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