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    3D simulation-based research on the effect of interconnect structures on circuit reliability by He, Feifei, Tan, Cher Ming

    Published 2015
    “…The simulation of the EM reliability of the interconnects is usually performed using the line-via structure at the EM test temperature (e.g. 300 oC).However, such simulation using the line-via structure may not give the same void nucleation location as in the real circuit structure, especially at the circuit operation temperature (e.g. 90C). …”
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    Journal Article
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